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Spontaneous formation of nanostructures during pulsed laser deposition of epitaxial half-Heusler TiNiSn on MgO(001)

机译：MgO（001）脉冲激光沉积脉冲激光沉积期间纳米结构的自发形成

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R. W. H. Webster; J. E. Halpin; S. R. Popuri; J.-W. G. Bos; D. A. MacLaren;
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1. Spontaneous formation of nanostructures during pulsed laser deposition of epitaxial half-Heusler TiNiSn on MgO(001) [J] . R. W. H. Webster, J. E. Halpin, S. R. Popuri, APL Materials . 2019,第1期

机译：在MgO（001）上外延半霍斯勒TiNiSn脉冲激光沉积过程中自发形成纳米结构
2. Structure and property of epitaxial titanium oxynitride grown on MgO(001) substrate by pulsed laser deposition [J] . Do H., Wu Y.-H., Dai V.-T., Surface & Coatings Technology . 2013,第Null期

机译：通过脉冲激光沉积在MgO（001）衬底上生长的外延氮氧化钛的结构和性能
3. Effect of growth defects on microwave properties in epitaxial Ba0.5Sr0.5TiO3 thin films grown on (001) MgO by pulsed laser deposition [J] . Tse YY, Suherman PM, Jackson TJ, Philosophical magazine: structure and properties of condensed matter . 2008,第16期

机译：生长缺陷对（001）MgO上脉冲激光沉积生长Ba0.5Sr0.5TiO3外延薄膜中微波性能的影响
4. Growth Behavior of Epitaxial MgO Films on Si(001) by Pulsed Laser Deposition [C] . Tomoaki Yamada, Naoki Wakiya, Kazuo Shinozaki, International Workshop on Interfaces of Ceramic Materials . 2003

机译：脉冲激光沉积在Si（001）上外延MgO膜的生长行为
5. Growth and characterization of epitaxial gallium arsenide films on germanium for optoelectronic devices using pulsed laser deposition. [D] . Thirunavukkarasu, Sumanth. 2005

机译：使用脉冲激光沉积在光电子器件上的锗上外延砷化镓薄膜的生长和表征。
6. Epitaxial Structure of (001)- and (111)-Oriented Perovskite Ferrate Films Grown by Pulsed-Laser Deposition [O] . Suvankar Chakraverty, Akira Ohtomo, Masaki Okude, -1

机译：脉冲激光沉积生长的（001）和（111）取向钙钛矿高铁酸盐薄膜的外延结构
7. Effect of Growth Defects on Microwave Properties in Epitaxial Ba_0.5Sr_0.5TiO₃ Thin Films Grown on (001) MgO by Pulsed Laser Deposition [O] . Tse, Yau Yau, Suherman, Phe M, Jackson, Tim, 2008

机译：生长缺陷对（001）MgO脉冲激光沉积生长外延Ba _{0.5 Sr _{0.5 TiO _{3 薄膜中微波性能的影响}}}

Spontaneous formation of nanostructures during pulsed laser deposition of epitaxial half-Heusler TiNiSn on MgO(001)

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