Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

摘要

We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as welludas ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). Theudelectrophysical measurements of Schottky barrier diodes and ohmic contacts wereudperformed both before and after rapid thermal annealing (RTA) up to 600 °С for theudstructures on Si, GaAs, InP and GaP, as well as up to higher temperatures for GaNud(~900 °C) and SiC (~1000 °C). The concentration depth profiles of contact componentsudwere taken using Auger electron spectrometry, while phase composition and surfaceudmorphology of the metallization layers on test structures were determined using x-rayuddiffraction and atomic force microscopy. It was shown that the silicon, indiumudphosphide, gallium phosphide and gallium arsenide contact structures retained theirudproperties and layer structure after RTA up to 600 °С. Contact degradation occurred at audtemperature of 800 °С. The structures based on SiC (GaN) remained stable at temperaturesudup to 1000 °С (900 °С).