Effect of short-time thermal annealings on characteristics of Ohm contacts on silicon microwaves diodes

摘要

A model for Schottky barrier tight ohmic contactbased on silicon-palladium (titanium) silicide contact system iscalculated and experimentally verified. It is shown that suchcontact systems are stable against thermal annealing in argonatmosphere for 60s at tempertures up to 400℃. The annealingtemperature increasing up to 600 and 800℃for 60s results inbreaking the contact layer structure and metallization cracking.Possible reasons for the ohmic contacts degradation are discussed.