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Characterisation of Step Coverage by Pulsed-Pressure Metalorganic Chemical Vapour Deposition: Titanium Dioxide Thin Films on 3-D Micro- and Nano-Scale Structures.

机译:脉冲压力金属有机化学气相沉积的阶梯覆盖度表征:3-D微尺度和纳米尺度结构上的二氧化钛薄膜。

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摘要

An examination of the possibility of applying pulse pressure metalorganic chemical vapour deposition (PP-MOCVD) to conformal coating and an investigation of PP-MOCVD processing parameters were undertaken using the deposition of thin, conformal titanium dioxide (TiO₂) on 3-D featured and non-featured substrates. The characterisation of the conformality and wettability analysis of thin TiO₂ was carried out using titanium tetraisopropoxide (TTIP) dissolved in toluene as a precursor and featured silicon (Si) and silicon nitride (Si₃N₄) as substrates. The features on the substrates were in micro- and nano-scale with the aspect ratio up to 2:1. The processing parameters investigated were temperatures between 400 and 600°C, reactor base pressures from 50 to 200 Pa, injection volumes between 50 and 250 µl, precursor concentrations in the range of 0.15 to 0.50 mol% and pulsing times from 10 to 20 sec. The surface morphology and thickness were examined using a scanning electron microscope (SEM). The composition of the films was qualitatively identified by energy dispersive X-ray spectroscopy (EDS). X-ray diffraction (XRD) and Raman spectroscopy were used to analyse the phase and grain size. The surface roughness and grain size were evaluated using atomic force microscopy (AFM). The optical properties were characterised using UV-VIS light spectroscopy. The anti-sticking characteristic was examined by wettability analysis, measuring the contact angle of the film with water. The research examined the relationships between processing parameters and growth rate, conformality, surface roughness, grain size, phase and water contact angle. A new measurement for thin film conformality was derived based on a statistical analysis of a large number of film thickness measurements on a fracture surface over the lithographed features. The best conformality of 0.95 was obtained for micro-scale features at the lowest temperature in the range of investigation, 400℃, with pulse exposure characterised by a base pressure of 100 Pa, TTIP concentration of 0.50 mol%, injection volume of 50 µl and pulsing time of 10 sec. Conformality for micro-scale features was in the range of 0.82 to 0.97 over a wide range of deposition temperatures. Conformality was as low as 0.45 over nano-scale structures at the higher exposure rate. The conformality decreased as the temperature and precursor concentration increased. The precursor injection volume was found to have minor influences on conformality.The growth rate increased as the temperature increased and reached the maximum at the deposition temperature of 450℃ with the precursor concentration of 0.50 mol% and injection volume of 100 µl. The base pressure and relaxation time had slight influences on the growth rate over the deposition temperature range of 400 to 500℃. The growth rate was increased as the precursor concentration and precursor injection volume increased. The deposited TiO₂ films exhibited columnar growth and anatase phase. The base pressure and pulsing time had no obvious effects on grain size and surface roughness. The grain size decreased as the deposition temperature increased. The surface roughness increased as the deposition temperature increased. Contact angles of over 100° were found with conformality of over 0.80. The variation in contact angle was related to the surface morphology of the deposited films. The contact angle increased as the grain size decreased. High wettability was found for films in the mid-range of pulse exposure, in this study at pulse exposure of 53, or at high deposition temperature, in this case at 600°C. The as-deposited TiO₂ thin films were hydrophobic depending on the surface morphology, surface roughness and grain size.
机译:研究了使用脉冲压力金属有机化学气相沉积(PP-MOCVD)涂覆保形涂层的可能性,并研究了PP-MOCVD工艺参数的研究,方法是在特征为3D且具有特征的3-D上沉积薄的保形二氧化钛(TiO 2)。非特征基材。用溶解在甲苯中的四异丙氧基钛(TTIP)作为前体,并以硅(Si)和氮化硅(Si 3 N 4)为基材,对薄TiO 2的保形性和润湿性进行了分析。基板上的特征具有微米和纳米尺度,长宽比高达2:1。研究的工艺参数为:温度在400至600°C之间,反应器基础压力为50至200 Pa,进样量为50至250 µl,前体浓度为0.15至0.50 mol%,脉冲时间为10至20秒。使用扫描电子显微镜(SEM)检查表面形态和厚度。膜的组成通过能量色散X射线光谱法(EDS)定性鉴定。 X射线衍射(XRD)和拉曼光谱法用于分析相和晶粒尺寸。使用原子力显微镜(AFM)评估表面粗糙度和晶粒尺寸。使用UV-VIS光谱对光学性质进行表征。通过润湿性分析检查抗粘特性,测量膜与水的接触角。该研究检查了加工参数与生长速率,保形性,表面粗糙度,晶粒尺寸,相和水接触角之间的关系。基于对光刻特征上方断裂表面上大量薄膜厚度测量值的统计分析,得出了薄膜保形性的新测量值。在研究范围内的最低温度(400℃)下,以微尺度特征获得的最佳保形度为0.95,脉冲暴露的特征是基本压力为100 Pa,TTIP浓度为0.50 mol%,进样量为50 µl,脉冲时间为10秒。在广泛的沉积温度范围内,微尺度特征的保形度在0.82至0.97的范围内。在较高的曝光速率下,纳米级结构的保形性低至0.45。随着温度和前驱物浓度的增加,保形性降低。发现前驱体的注入量对保形性影响较小。生长速率随温度的升高而增加,并在沉积温度为450℃,前驱体浓度为0.50 mol%,注入量为100 µl时达到最大值。在400-500℃的沉积温度范围内,基本压力和松弛时间对生长速率有轻微的影响。随着前驱物浓度和前驱物注入量的增加,生长速率增加。沉积的TiO 2膜显示出柱状生长和锐钛矿相。基本压力和脉冲时间对晶粒度和表面粗糙度没有明显影响。随着沉积温度的升高,晶粒尺寸减小。随着沉积温度的增加,表面粗糙度增加。发现接触角超过100°,保形度超过0.80。接触角的变化与沉积膜的表面形态有关。接触角随着晶粒尺寸的减小而增加。在脉冲曝光的中间范围内(在本研究中以53的脉冲曝光)或在高沉积温度(在这种情况下为600°C)下,发现膜的润湿性较高。所沉积的TiO 2薄膜是疏水的,这取决于表面形态,表面粗糙度和晶粒尺寸。

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    Siriwongrungson Vilailuck;

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  • 年度 2010
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