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首页> 外文期刊>Chemical vapor deposition: CVD >Conformality Investigation of Titanium Dioxide Thin Films on 3-D Micrometer-and Nanometer-scale Features by Pulsed-Pressure Metal-organic CVD
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Conformality Investigation of Titanium Dioxide Thin Films on 3-D Micrometer-and Nanometer-scale Features by Pulsed-Pressure Metal-organic CVD

机译:脉冲压力金属有机CVD在3D微米和纳米级特征上二氧化钛薄膜的保形性研究

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摘要

The influence of the processing parameters on conformality is studied for pulsed-pressure (PP) metal-organic (MO)CVD. A statistical method to measure conformality, and a model for pulse vapor exposure are presented. Titanium dioxide (TiO_2) thin films are deposited from a liquid titanium isopropoxide (TTIP, Ti(OPr)_4) solution with no carrier gas on silicon and silicon nitride substrates with 3-D micrometer-and nanometer-scale structures. The deposited films are columnar anatase TiO_2 with thicknesses between 130nm and 310 nm, controlled by the number of pulses. The statistical conformality varies from 0.81 to 0.93, decreased slightly with increasing deposition temperature, and is insensitive to pulse exposure.
机译:对于脉冲压力(PP)金属有机(MO)CVD,研究了工艺参数对保形性的影响。介绍了一种用于测量适形性的统计方法以及一个脉冲蒸汽暴露模型。二氧化钛(TiO_2)薄膜是在没有载气的液态异丙醇钛(TTIP,Ti(OPr)_4)溶液中沉积在具有3D微米和纳米级结构的硅和氮化硅衬底上的。沉积的膜是柱状锐钛矿型TiO_2,其厚度在130nm至310nm之间,受脉冲数控制。统计保形度从0.81到0.93不等,随沉积温度的升高略有下降,并且对脉冲暴露不敏感。

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