Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films

• 1. 用于沉积多组分金属氧化物薄膜的第2族金属前体 [P] . 中国专利： CN101328188A . 2008-12-24
• 2. 用于2族金属氧化物膜的沉积的2族金属前体 [P] . 中国专利： CN101735082A . 2010-06-16
• 3. Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films [P] . 英国专利： GB0301886D0 . 2003-02-26

  机译： 用于IVB族金属氧化物薄膜的金属有机化学气相沉积的改良前体

• 4. Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate thin films [P] . 英国专利： GB0406190D0 . 2004-04-21

  机译： 用于IVB族金属硅酸盐薄膜的金属有机化学气相沉积的改良前体

• 5. Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate thin films [P] . 英国专利： GB0306422D0 . 2003-04-23

  机译： 用于IVB族金属硅酸盐薄膜的金属有机化学气相沉积的改良前体

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• 3. Chemical vapour deposition of tungsten oxide thin films from single-source precursors. [D] . Cross, Warren Bradley. 2003
• 4. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene [O] . Julia Kitzmann, Alexander Göritz, Mirko Fraschke, -1
• 5. Characterisation of Step Coverage by Pulsed-Pressure Metalorganic Chemical Vapour Deposition: Titanium Dioxide Thin Films on 3-D Micro- and Nano-Scale Structures. [O] . Siriwongrungson Vilailuck 2010

• 1. Synthesis and Characterization of Metal Organic Chemical Vapour Deposited Copper Titanium Oxide (Cu-Ti-O) Thin Films from Single Solid Source Precursor [J] . Oladepo Fasakin ,Marcus Adebola Eleruja ,Olumide Oluwole Akinwunmi . 现代物理（英文） . 2013,第12期
• 2. Characterization of GaSb Films by Metalorganic Chemical Vapour Deposition [J] . 李树玮 ,张宝林 ,金亿鑫 . 稀有金属：英文版 . 1997,第3期
• 3. Preparation and Some Properties of Metal Organic Chemical Vapour Deposited Al-Doped ZnO Thin Films Using Single Solid Precursors [J] . Olumide Oluwole Akinwunmi ,Johnson Ayodele O. Ogundeji ,Adetokunbo Temitope Famojuro . 现代物理（英文） . 2018,第11期
• 4. Some Properties of Manganese Oxide （Mn-O） and Lithium Manganese Oxide （Li-Mn-O） Thin Films Prepared via Metal Organic Chemical Vapor Deposition （MOCVD） Technique [J] . Kabir O. Oyedotun1 ,Marcus Adebola Eleruja1 ,Bolutife Olofinjana1 . 材料科学与工程：中英文B版 . 2015,第005期
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• 6. 锆基IVB--V族过渡金属三硫化物CVD可控生长及性能研究 [A] . 余徐 . 2019