Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate thin films

• 1. 用于沉积多组分金属氧化物薄膜的第2族金属前体 [P] . 中国专利： CN101328188A . 2008-12-24
• 2. 用于二氧化硅或金属硅酸盐薄膜的前体 [P] . 中国专利： CN1821251A . 2006-08-23
• 3. Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate thin films [P] . 英国专利： GB0406190D0 . 2004-04-21

  机译： 用于IVB族金属硅酸盐薄膜的金属有机化学气相沉积的改良前体

• 4. Improved precursors for the metalorganic chemical vapour deposition of group IVB metal silicate films [P] . 英国专利： GB0320929D0 . 2003-10-08

  机译： 用于IVB族金属硅酸盐薄膜的金属有机化学气相沉积的改良前体

• 5. Improved precursors for the metalorganic chemical vapour deposition of group IVB metal oxide thin films [P] . 英国专利： GB0401321D0 . 2004-02-25

  机译： 用于IVB族金属氧化物薄膜的金属有机化学气相沉积的改良前体

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• 2. A COMPARATIVE STUDY OF ERBIUM OXIDE AND GADOLINIUM OXIDE HIGH-K DIELECTRIC THIN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOUR DEPOSITION (MOCVD) USING β-DIKETONATES AS PRECURSORS [C] . M.P. Singh, C.S. Thakur, K. Shalini, Electrochemical Society Meeting and International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues; 20031012-20031016; Orlando,FL; US . 2003
• 3. Metalorganic chemical vapor deposition of multiferroic bismuth ferrite films using a new precursor combination. [D] . Singh, Manish Kumar. 2009
• 4. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene [O] . Julia Kitzmann, Alexander Göritz, Mirko Fraschke, -1
• 5. Cobalt(I) Olefin Complexes: Precursors for MetalOrganic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films [O] . -1

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