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Chemical vapour deposition of tungsten oxide thin films from single-source precursors.

机译:从单源前驱体化学气相沉积氧化钨薄膜。

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摘要

This thesis describes the chemical vapour deposition (CVD) of tungsten oxide thin films on glass from a wide range of single-source precursors. Chapter 1 describes previous work that has motivated this research. Chapter 2 discusses the synthesis of conventional style candidates for single-source precursors. Reactions of WOCl4 with 3-methyl salicylic acid (MesaliH2) and 3,5-di-iso-propyl salicylic acid (di-i-PrsaliH2) yielded the ditungsten complexes [WO(Mesali)(MesaliH)2(mu-O)], 1, and [WO(di-i-Prsali)(di-i-PrsaliH)2(mu-O)], 2, and the monotungsten complex [WO(di-i-Pr sali)(di-i-PrsaliH)Cl], 3. Tungsten(VI) dioxo complexes were prepared by ligand exchange reactions of [WO2(acac)2], 4, yielding [WO2(catH)2], 5, and [WO2(malt)2], 6, (catH2 = 3,5-di-tert-butyl-catechol; maltH = maltol). Chapter 3 describes thermal analyses of the complexes 1 - 6 and tungsten hexaphenoxide, and consequently their suitability for CVD. The use of [W(OPh)6] and 2 - 6 in aerosol assisted CVD is reported in Chapter 4. Brown tungsten oxide was deposited from 2 and 3 at 600 °C; blue partially-reduced WO3-x thin films were deposited from [W(OPh)6] from 300 to 500 °C, from 4 at 600 °C and 6 at 620 °C. Sintering all of the coatings in air at 550 °C afforded yellow films of stoichiometric WO3. Raman spectroscopy and glancing angle XRD showed that coatings deposited from [W(OPh)6] at 300 °C were amorphous, whereas all the other films were the monoclinic phase gamma-tungsten oxide. Taking full advantage of the aerosol vaporisation technique led to the CVD of tungsten oxide films from polyoxometalate single-source precursors, as described in Chapter 5. The isopolyanion [nBu4N]2[W6O19], 7, afforded WO3 at 410 °C; the heteropolyanions [nBu4N]4H3[PW11O39], 8, and [nBu4N]4[PNbW11O40], 9, were used to deposit doped WO3 thin films in a highly-controlled manner at 480 °C. Thus, the unprecedented use of large, charged clusters for CVD was demonstrated. Chapter 6 describes investigations of the tungsten oxide films as photocatalysts for the destruction of organic pollutants. Fully-oxidised, yellow WO3 coatings showed excellent photocatalytic activity for the destruction of an over-layer of stearic acid. This could lead to the application of tungsten oxide films on glass as self-cleaning windows.
机译:本文描述了由多种单源前驱体在玻璃上氧化钨薄膜的化学气相沉积(CVD)。第1章介绍了激发该研究的先前工作。第2章讨论了单一来源前体的常规样式候选者的综合。 WOCl4与3-甲基水杨酸(MesaliH2)和3,5-二异丙基水杨酸(di-i-PrsaliH2)的反应生成了二钨配合物[WO(Mesali)(MesaliH)2(mu-O)] ,1和[WO(di-i-PrsaliH)(di-i-PrsaliH)2(mu-O)],2和单钨络合物[WO(di-i-Pr sali)(di-i-PrsaliH )Cl],3.通过[WO2(acac)2],4,的配体交换反应制备钨(VI)二氧杂配合物,生成[WO2(catH)2],5,和[WO2(malt)2],6 ,(catH 2 = 3,5-二叔丁基-邻苯二酚;麦芽H =麦芽酚)。第3章介绍了配合物1-6和六氧化二钨的热分析,以及其对CVD的适用性。在第4章中报道了[W(OPh)6]和2-6在气溶胶辅助CVD中的使用。褐色氧化钨是在600°C下从2和3沉积的。在[W(OPh)6]的300-500°C,600°C的4和620°C的6范围内淀积蓝色部分还原的WO3-x薄膜。在550℃下在空气中烧结所有涂层,得到化学计量的WO 3的黄色膜。拉曼光谱和掠射角X射线衍射表明,[W(OPh)6]在300°C下沉积的涂层是非晶态的,而所有其他膜均为单斜晶相γ-钨氧化物。如第5章所述,充分利用气溶胶汽化技术导致多金属氧酸盐单源前驱体对氧化钨膜进行CVD。异聚阴离子[nBu4N] 2 [W6O19],7,在410°C的温度下提供WO3。杂多阴离子[nBu4N] 4H3 [PW11O39] 8和[nBu4N] 4 [PNbW11O40] 9被用于在480°C下以高度受控的方式沉积掺杂的WO3薄膜。因此,证明了前所未有的将大型的带电簇用于CVD。第6章介绍了对氧化钨膜作为光催化剂用于破坏有机污染物的研究。完全氧化的黄色WO3涂层具有出色的光催化活性,可破坏硬脂酸的覆盖层。这可能导致氧化钨薄膜在玻璃上的应用作为自清洁窗口。

著录项

  • 作者

    Cross, Warren Bradley.;

  • 作者单位

    University of London, University College London (United Kingdom).;

  • 授予单位 University of London, University College London (United Kingdom).;
  • 学科 Materials science.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 156 p.
  • 总页数 156
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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