A Measurement Method for Determining the Optical and Electro-Optical Properties of a Thin Film

摘要

A method of determining the complex refractive index of a thin film on a nonabsorbing substrate is developed. The optical transmittance spectrum of the structure is measured and the index is determined by matching this spectrum numerically. An iterative procedure for finding the magnitude of an induced change in refractive index is also presented. In nonabsorbing spectral regions, the index and film thickness are determined directly. The optical transmittance of sapphire and thin films of gold and epitaxial silicon, both on sapphire, is examined. The refractive index of epitaxial silicon on sapphire, SOS, is determined and compares favorably with the results of other investigators. The measurement method is applied to a thin film of hydrogenated amorphous silicon, a-Si:H, deposited by a capacitively coupled rf glow discharge. The index is tabulated for various wavelengths and a field induced change in index comparable to GaAs is measured.