Effect of deposition temperature on electro-optical properties of SnO2 thin films fabricated by a PECVD method

摘要

Tin oxide(SnO2)thin films were prepared on glass substrates by a Plasma Enhanced Chemical Vapor Deposition(PECVD)method at different temperatures.The XRD data indicate that films are polycrystalline SnO2,which is in the tetragonal system with a rutile-type structure.As the deposition temperature was increased,the texture plane of a film changed from the(200)plane to denser(211)and(110)planes.SnO2 thin films prepared at 275 deg C have a high resistivity of 1.07Xl0~(-1)OMEGA·cm and low transmittance of 69.78%.On the other hand,SnO2 thin films deposited at 325~425 deg C show an electrical resistivity of ~10~(-2)OMEGA·cm and a transmission coefficient between 80% and 85% in most of the visible spectrum.The properties of SnO2 films were critically affected by the deposition temperature.