METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM

摘要

Disclosed is a method for fabricating a CuInS₂ thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS₂ thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS₂ thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS₂ thin film fabricated by the method. Disclosed is further a method for fabricating an In₂S₃ thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS₂ thin film by MOCVD. Disclosed further is an In₂S₃ thin film fabricated by the method. The In₂S₃ thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.