Research and Development on Technologies for the Preparation of III-V Semiconductor Materials and on Methods for Evaluation of the Quality of These Materials: Production of Gallium Phosphide Crystals

摘要

Methods for economic synthesis and crystal growth of gallium phosphide were developed. Polycrystalline ingots up to 800 gr of the dense and homogeneous quality necessary for crystal growth are currently produced with very good yield. The conditions for high pressure crystal growth by the liquid encapsulation technique were thoroughly investigated and optimized in a manner that permits industrial production of substrate quality crystals with a weight of 700 grams and a diameter of 50 mm. Diameter variations, common in the growth of GaP crystals, can be reduced to a few millimeters by a monitoring system based on crystal weighing.