Studies of III-V Semiconductor Materials and Devices Using Different Analytical Technologies

摘要

Surface analysis technologies are very important and had been widely used in semiconductor material and device analysis. In this presentation, several important studies of III-V semiconductor materials and devices using different surface analyses, including scanning electron microscopy, energy dispersive spectrometer (SEM+EDS), X-ray photoelectron spectroscopy (XPS), especially secondary ion mass spectrometry (SIMS), will be introduced. For example, the physical origin of the droop effect; different failure mechanism; etching mechanism of lateral porous GaN, and how to distinguish the dopant occupation in the semiconductor lattice, etc.