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METHOD OF FORMING GROUP III-V MATERIAL LAYER, SEMICONDUCTOR DEVICE INCLUDING THE GROUP III-V MATERIAL LAYER, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR LAYER
METHOD OF FORMING GROUP III-V MATERIAL LAYER, SEMICONDUCTOR DEVICE INCLUDING THE GROUP III-V MATERIAL LAYER, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR LAYER
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机译:形成III-V族材料层的方法,包括III-V族材料层的半导体器件以及制造半导体层的方法
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摘要
A method of forming a group III-V material layer, a semiconductor device including the group III-V material layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate; a group III-V channel layer formed on the substrate; a gate insulating layer formed on the group III-V channel layer; and a gate electrode and source and drain electrodes formed on the gate insulating layer, the source and drain electrodes having intervals from the gate electrode, wherein voids exist between a lower portion of the group III-V channel layer and an insulating layer. The group III-V channel layer may include a binary, ternary, or quaternary material.
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