METHOD OF FORMING III-V GROUP MATERIAL LAYER, SEMICONDUCTOR DEVICE COMPRISING III-V GROUP MATERIAL LAYER AND METHOD OF MANUFACTURING THE SAME

摘要

About the method for forming III-V races material layer, semiconductor element and manufacturing method including III-V races material layer are contained. By the semiconductor information implemented on the one of this hair name, in the III-V races channel that machine version, above-mentioned chessboard are formed, the insulating layer of a dot, prelude that a upper channel is constituted forms preceding play, forward, the sauce intensified and preceding play. The copolar of the lower end perimeter for the III-V races channel being included exists. Above-mentioned III-V races channel may include 2 yuan of substance, 3 yuan of substance or 4 yuan of substance.