New Production Technology for Variable Hue Gap Light Emitting Diodes of GaP

摘要

A single GaP crystal chip which emits red and green light, generated by two separate p-n junctions, was fabricated and used in the development of a variable hue LED. The driving of both p-n junctions were deposited by liquid phase epitaxy. The epitaxial process is depicted and characterized first for the red end, then for the green end of the diode. The dependence of quantum efficiency on doping (Zn) concentration is discussed. Effects of changing the order in which the epitaxial layers are deposited (green then red; red then green) are shown. The color characteristics of the optimized multihue LED are given.