EPITAXIAL WAFER FOR GAP LIGHT EMITTING DIODE AND GAP LIGHT EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide a GaP light emitting diode of high luminance. ;SOLUTION: This light emitting diode is formed of an epitaxial wafer for a GaP light emitting diode in which a PN junction is formed by laminating at least one N-type GaP epitaxial layer and at least one P-type GaP epitaxial layer on a GaP single crystal substrate. In this case, the dislocation density (EPD) of the GaP single crystal substrate described above is at most 3×10^-3 cm^-3, the dopant of the GaP single crystal substrate is tellurium(Te) or silicon(Si), and the concentration of sulfur (S) in the GaP single crystal substrate is at most 5×10¹⁶ cm^-3.;COPYRIGHT: (C)1999,JPO