METHOD FOR PRODUCING EPITAXIAL WAFER FOR NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE, EPITAXIAL WAFER FOR THE NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE, AND THE NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide a process for producing an epitaxial wafer for nitride semiconductor light-emitting diode, in which a moderately roughened surface exhibiting high light take-out efficiency is provided, without bringing about increase in fabrication method and fabrication cost, as in the methods where wet etching or a resist pattern have been used for a long time.;SOLUTION: When at least one of a plurality of nitride semiconductor layers is grown epitaxially, a protruding and recessed surface having a level difference of 50 nm or larger is formed on the surface of the nitride semiconductor layer which is formed at the topmost part, while setting the mol ratio in supply of group-V material and group-III material to be 1,000 or smaller.;COPYRIGHT: (C)2007,JPO&INPIT