GaPN-GaP double heterostructure light emitting diode grown on GaP substrate by solid-source molecular beam epitaxy

摘要

GaPN-GaP double heterostructure (DH) light emitting diodes (LEDs) were fabricated on GaP substrate by solid-source molecular beam epitaxy (SSMBE) with an rf plasma nitrogen source. High resolution X-ray diffraction (HRXRD) revealed that the LEDs had a high crystalline quality. The luminescence properties of GaPN-GaP DH LEDs were evaluated by electroluminescence (EL). All the EL peak wavelengths of LEDs were located between 645 and 660 nm. When the LEDs were operated at a forward current of 10 mA at room temperature (RT), the peak wavelengths of LEDs were 645, 647, and 653 nm with the nitrogen composition of 1.8, 2.1, and 2.6%, respectively. The light output of the LED with a nitrogen composition of 2.1% was the highest and that of 2.6% was the lowest. The EL emission peak of LEDs showed slight blueshift (about 7 nm) with increasing currents due to the band-filling effect.