Semiconductor Measurement Technology: Database for and Statistical Analysis of the Interlaboratory Determination of the Conversion Coefficient for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption

摘要

The Special Publication contains the data collected for the worldwide, double-round-robin determination of the conversion coefficient used to calculate the interstitial oxygen content of silicon from infrared absorption measurements. It also contains detailed statistical analyses of the data. The approach taken to determine the conversion coefficient was to conduct inter-laboratory round robins for both the infrared measurements and the absolute measurements. The infrared measurements were carried out at 18 laboratories in China, Europe, Japan, and the United States, using either dispersive infrared or Fourier transform infrared spectrometers. The absolute measurements were carried out at eight laboratories in Europe, Japan, and the United States, using either charged-particle activation analysis, photon activation analysis, or inert gas fusion analysis.