MOSFET Level 3 Model in APLAC

机译：apLaC中的mOsFET 3级模型

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摘要

The APLAC implementation of the SPICE level 3 MOS model is documented. The draincurrent equations and their physical background are covered. The documentation is complete and consists of all the equations required for the implementation.

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作者
Andersson, M.; Kankkunen, A.; Valtonen, M.;
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年度 1991
页码
总页数 25
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Field effect transistors; MOSFET; Mathematical models; Computerized simulation; Software tools; Electric current;

机译：场效应晶体管; mOsFET;数学模型;计算机模拟;软件工具;电流;

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6. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime [O] . Yasuhisa Omura 2019

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7. Atomic level modeling of extremely thin silicon-on-insulator MOSFETs including the silicon dioxide: Electronic structure [O] . Frauenheim Thomas, Chen Guanhua, Xie Hang, 2015

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8. MOSFET Level 1 and 2 Models in APLAC [R] . Kankkunen, A., Andersson, M., Valtonen, M. 1991

机译：apLaC中的mOsFET 1级和2级模型

MOSFET Level 3 Model in APLAC

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