Total Dose Hardness of MOS Devices in Hermetic Ceramic Packages

机译：密封陶瓷封装中mOs器件的总剂量硬度

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Total dose hardness of hardened MOS transistors is degraded by hydrogen gas trapped in hermetic ceramic package cavities. A new role for hydrogen in interface state formation is observed. (ERA citation 13:034768)

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Kohler, R. A. ; Kushner, R. A. ; Lee, K. H.;
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年度 1988
页码 1-8
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
MOS Transistors; Ceramics; Hydrogen; Radiation Effects;

机译：mOs晶体管;陶瓷;氢;辐射效应;

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专利

1. Total dose radiation hardness of MOS devices in hermetic ceramic packages [J] . Kohler R.A., Kushner R.A. IEEE Transactions on Nuclear Science . 1988,第6期

机译：密封陶瓷封装中MOS器件的总剂量辐射硬度
2. The Effects of Hydrogen in Hermetically Sealed Packages on the Total Dose and Dose Rate Response of Bipolar Linear Circuits [J] . Pease R. L., Platteter D. G., Dunham G. W., IEEE Transactions on Nuclear Science . 2007,第6期

机译：密封包装中氢对双极线性电路总剂量和剂量率响应的影响
3. Total dose hardness assurance techniques for new generation COTS devices [J] . Lee C.I., Rax B.G. IEEE Transactions on Nuclear Science . 1996,第6期

机译：新一代COTS装置的总剂量硬度保证技术
4. Total-dose hardness assurance-testing for CMOS devices in space environment [C] . Kamimura, H., Sakagami, Reliability and Maintainability Symposium, 1992. Proceedings., Annual . 1992

机译：太空环境中CMOS器件的总剂量硬度保证测试
5. Total Ionizing Dose Radiation Effects and Negative Bias Temperature Instability on SiGe pMos Devices [D] . Duan, Guoxing. 2016

机译：SiGe PMOS器件上的总电离剂量辐射效应和负偏置温度不稳定性
6. Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS [O] . Wen-Ching Hsieh, Hao-Tien Daniel Lee, Fuh-Cheng Jong, 2016

机译：使用氟处理的MOHOS改善总电离剂量辐射传感器的性能
7. Thermocompression bonding for wafer level hermetic packaging of RF-MEMS devices [O] . 2006

机译：用于RF-MEMS器件的晶片水平气密包装的热压键合
8. Total-Dose Hardness Assurance for Space Applications of Commercial CMOS Devices. [R] . Fleetwood, D. M., Winokur, P. S., Pease, R. L. 1989

机译：商用CmOs器件空间应用的总剂量硬度保证。

Total Dose Hardness of MOS Devices in Hermetic Ceramic Packages

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