Total-dose hardness assurance-testing for CMOS devices in space environment

摘要

A practical method for total-dose hardness assurance testing for CMOS devices in a space environment is presented to predict the radiation-induced threshold voltage shift and leakage current. Simple radiation response models for the threshold voltage shift and leakage current are given. The model parameters can be determined by laboratory irradiation testing with Co-60 gamma-rays at a high dose rate. Using this method, the threshold voltage shift and leakage current of MOSFETs can be predicted at low dose rate and at any temperature from room temperature to 80 degrees C.