High-Current, Fast-Switching Transistor Development

摘要

The design, wafer-processing techniques, and various measurements which include forward safe operating area, dc characteristics, and switching times are described for a larger-diameter (33) transistor. An improved base contact for equalizing the base-emitter voltage at high currents was developed along with an improved emitter contact preform which increases the silicon area available for current conduction. The electrical performance achieved is consistent with the proposed optimum design.