Si/SiO2 Intrinsic States and Interface Charges. Chapter 1. Origin, Properties, Models, Impact

摘要

The SiO2/Si interface states, Dit, and oxide fixed charges, Qf, and their dynamics are surveyed. Their inclusion in equivalent networks is outlined. The impact of specific technological steps on the number of interface and fixed oxide charges is considered. Models for Dit and Qf are discussed. It is shown how they degrade the performance of silicon devices.