Numerical Modeling of Twinning in GaAs Crystals During Space Growth Process

摘要

A quantitative model for prediction of twin formation during the space Gallium Arsenide (GaAs) crystal growth has developed. Twinning is an important defect in advanced semiconductor crystals such as GaAs and InP. The deformation twins are formed in the GaAs crystal during its growth processes from the melt in the space. The thermal stresses during the crystal growth are the primary cause of deformation twinning formation. The thermoelastic stresses generated in the grown crystals are calculated from two-dimensional finite element analysis. In the present study, a new computer simulation model is developed for calculating the stress distributions of each twin systems in the GaAs crystals grown at different growth orientations from the melt. This investigation is expected to further the understanding of twinning formation and provide valuable information about the growth parameters' effects on twinning formation in crystals for growing low defect GaAs crystals.