Method for preventing twinning in GaAs single crystal growth

摘要

Type gallium arsenide (GaAs) single crystal grown by a horizontal bridging method. In a conventional 2T or 3T-HB method, the amount of gallium arsenide melt In order to solve the problem of twinning or polycrystallization by causing a change in vapor pressure of arsenic (As) filling the quartz reaction tube due to a minute change, arsenic (As) is kept so that the inside of the quartz-It is a method of suppressing the twinning in the growth of gallium arsenide single crystal by controlling the temperature of the region.