A method to fabricate high quality GaAs single crystals by changing the shoulder angle of the booth during GaAs single crystal growth by vertical temperature gradient method

摘要

The present invention relates to a method for manufacturing a high-quality GaAs single crystal using a vertical temperature gradient reduction method, and in order to manufacture a high-quality GaAs single crystal by reducing the generation of dislocations, it is possible to improve the thermal condition by changing the shoulder angle of the boat Thereby suppressing the generation of the twin crystal of the polycrystal and flattening the solid-liquid interface.