A method of flattening the solid-liquid interface during GaAs single crystal growth by vertical temperature gradient method

摘要

The present invention relates to a method for improving the solid-liquid interface shape by controlling the growth parameters and the influence of the growth parameters on the solid-liquid interface shape during the growth of the GaAs single crystal by the vertical temperature gradient reduction method, GaAs single crystal growth by vertical temperature gradient reduction is selected by selecting at least one of increasing the axial temperature gradient, decreasing the temperature gradient in the high temperature region, increasing the cone angle of the boat, or increasing the growth rate. And the solid-liquid interface is flattened.