Fabrication of Microstripline Wiring for Large Format Transition Edge Sensor Arrays.

摘要

We have developed a process to integrate microstripline wiring with transition edge sensors (TES). The process includes additional layers for metal-etch stop and dielectric adhesion to enable recovery of parameters achieved in non-microstrip pixel designs. We report on device parameters in close-packed TES arrays achieved with the microstrip process including R(sub n), G, and T(sub c) uniformity. Further, we investigate limits of this method of producing high-density, microstrip wiring including critical current to determine the ultimate scalability of TES arrays with two layers of wiring.