Texturing of InP Surfaces for Device Applications

摘要

A unique process for texturing InP (100) wafers by anisotropic etching wasdeveloped. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices.