Hydrogen Incorporation in Boron-Doped 6H-SiC CVD Epilayers Produced Using Site-Competition Epitaxy

摘要

We report on the initial investigations of using site-competition epitaxy to control boron incorporation in chemical vapor deposition (CVD) 6H-SiC epilayers. Also reported is the detection of hydrogen in boron-doped CVD SiC epilayers and hydrogen-passivation of the boron-acceptors. Results from low temperature photoluminescence (LTPL) spectroscopy indicate that the hydrogen content increased as the capacitance-voltage (C-V) measured net hole concentration increased. Secondary ion mass spectrometry (SIMS) analysis revealed that the boron and the hydrogen incorporation both increased as the Si/C ratio was sequentially decreased within the CVD reactor during epilayer growth. Epilayers that were annealed at 1700 C in argon no longer exhibited hydrogen-related LTPL lines, and subsequent SIMS analysis confirmed the outdiffusion of hydrogen from the boron-doped SiC epilayers. The C-V measured net hole concentration increased more than threefold as a result of the l7OO C anneal, which is consistent with hydrogen passivation of the boron-acceptors. However, boron related LTPL lines were not observed before or after the 1700 C anneal.