Reliability Assessment of Multiple Quantum Well Avalanche Photodiodes

摘要

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanchephotodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.