Long Wavelength INGaAs/InGaAsP Quantum Well Lasers at [approximately] 2.0 micrometers

摘要

InGaAs/InGaAsP strained quantum well buried heterostructure and distributed feedback lasers emitting at wavelengths as long as 2.06 micrometers with low internal loss and threshold currents have been demonstrated for the first time. The room and high temperature characteristics and the threshold gain are discussed.