首页> 外文OA文献 >Wavelength dependence of noise figure in InGaAs/InGaAsP multiple-quantum-well laser amplifier
【2h】

Wavelength dependence of noise figure in InGaAs/InGaAsP multiple-quantum-well laser amplifier

机译:InGaas / InGaasp多量子阱激光放大器中噪声系数的波长依赖性

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Theoretical and experimental results are presented for the wavelength dependence of the noise figure and the single-pass gain in multiquantum well amplifiers. The theoretical model accounts for both conduction band/heavy hole band and conduction band/light-hole band transitions. The calculations are in good agreement with the experimental results, which indicate that the noise figure has some dependence on the wavelength. A minimum traveling-wave amplifier (TWA) noise figure of 3.9 dB has been measured at 1550 nm for a single-pass of 22 dB
机译:给出了噪声系数的波长依赖性和多量子阱放大器中的单通增益的理论和实验结果。理论模型考虑了导带/重空穴带和导带/轻空穴带的跃迁。计算结果与实验结果吻合良好,表明噪声系数与波长有关。在1550 nm处测得的最小行波放大器(TWA)噪声系数为3.9 dB,单通为22 dB

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号