Evolving surface cusps during strained-layer epitaxy

摘要

We have combined Z-contrast imaging and Ge marker layer experiments to study the evolving surface morphology of Si(sub x)Ge(sub 1-x) alloys grown by molecular beam epitaxy (MBE). Surface cusps are seen to arise as the intersection lines between coherent islands. The potential implications of stress concentrations associated with cusps are considered with a view to strain relaxation in the film via dislocation nucleation.