Performing epitaxy process, comprises arranging substrate exhibiting semiconductor surfaces on carrier, heating semiconductor surfaces to temperature provided for epitaxy and epitaxially growing semiconductor material

摘要

Performing an epitaxy process, comprises arranging substrate (2) exhibiting semiconductor surfaces on a carrier (3), heating at least the semiconductor surfaces to a temperature provided for the epitaxy and epitaxially growing semiconductor material on the semiconductor surfaces. The substrate is a metal substrate and the semiconductor surfaces are formed by semiconductor layers (1) arranged on the substrate.