Modelling and optimizing the structure of a PtSi/Si focal plane array photodetector

摘要

The report reviews photoemission theory and discusses optimization methods for Schottky-barrier infrared detectors. Current photoresponse models are extended by including tunnelling currents. Tunnelling photoemission probabilities through the barrier are calculated using the WKB-approximation. The author has investigated how the performance of the detector is influenced by a high doping density at the junction due to ion implantation of the silicon surface prior to metal deposition. A new concept for calculating the tunnelling dark current is introduced. Two new alternative optimization methods are described and compared to the traditional method of maximizing the internal response at a wavelength of (lambda)=4(mu)m. 31 refs., 18 figs., 6 tabs. (Atomindex citation 26:038133)