Wafer-level pulsed-DC electromigration response at very high frequencies

摘要

DC and pulsed-DC electromigration tests were performed at the Wafer-Level Pulsed-DC Electromigration Response and pulsed-DC electromigration tests were performed at the wafer level using standard and self-stressing test structures. DC characterization tests over a very large temperature range (180 to 560(degrees)C) were consistent with an interface diffusion mechanism in parallel with lattice diffusion. That data allowed for extraction of the respective activation energies and the diffusion coefficient of the rapid mechanism. The ability to extract simultaneously a defect-based diffusion coefficient and activation energy is significant given the extreme difficulty in making those measurements in aluminum. The pulsed-DC experiments were conducted over a range that includes the highest frequency to date, from DC to 500 MHz. Measurements were also made as a function of duty factor from 15% to 100% at selected frequencies. The data shows that the pulsed-DC lifetime is consistent with the average current density model at high (> 10 MHz) frequencies and showed no additional effects at the highest frequency tested (500 MHz). At low frequencies, we attribute the lessened enhancement to thermal effects rather than vacancy relaxation effects. Finally, the deviation in lifetime from the expected current density dependence, characterized over 1(1/2) orders of magnitude in current density, is explained in terms of a shift in the boundary condition for electromigration as the current density is decreased.