Enhanced low-rate radiation-induced charge trapping at the emitter-base/oxide interface of bipolar devices

摘要

The performance, reliability and radiation hardness of modern bipolar/BiCMOS devices and IC's is limited by changes in surface recombination velocity and surface potential due to oxide-trap charge in the base oxide and near-midgap interface traps at the emitter- base/oxide interface. This report discusses how this charge trapping is enhanced by low-rate radiation as with implantation and annealing.