The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices

摘要

An effective method to generate traps at the interface was developed to enhance the charge trapping capability of HfO2/Al2O3 multilayered memory devices. A high charge density was obtained in the inter-diffusion layer in which additional trap sites could be created by thermal-treatment induced inter-diffusion. By keeping the consistent thickness of the charge trapping layer and increasing the number of the inter-diffusion layers, more traps can be introduced in the charge trapping layer. So, creating more trap sites by enhancing the inter-diffusion at the interface of different high-k dielectrics could be a potential choice for future memory applications.