Quantum Well Width Dependence of Threshold Current Density in InGaN Lasers;Applied Physics Letters

摘要

The quantum confined Stark effect was found to result in a strong quantum well width dependence of threshold current density in strained group-III nitride quantum well lasers. For an In(sub0.2)Ga(sub 0.8)N/GaN structure with quantum well width in the neighborhood of 3.5nm, the authors' analysis shows that the reduction in spontaneous emission loss by the electron-hole spatial separation outweights the corresponding reduction in gain to produce a threshold current density minimum.