Theoretical Limit to the Laser Threshold Current Density in an InGaN Quantum Well Laser; Applied Physics Letters

摘要

This paper describes an investigation of the spontaneous emission limit to the laser threshold current density in an InGaN quantum well laser. The peak gain and spontaneous emission rate as functions of carrier density are computed using a microscopic laser theory. From these quantities, the minimum achievable threshold current density is determined for a given threshold gain. The dependence on quantum well width, and the effects of inhomogeneous broadening due to spatial alloy variations are discussed. Also, comparison with experiments is made.