Reduction of threshold current density in InGaN-AlGaN quantum wire and quantum dot lasers due to excitonic transitions

摘要

This paper presents computations showing the effect of excitonic transitions in reducing the threshold current density J/sub th/ in the presence of a large dislocation density in InGaN-AlGaN quantum wire and dot lasers. The effect of reduction in lateral and transverse dimensions on the threshold current density is also shown. A comparison of the computed values of J/sub th/ for quantum wire and dot lasers with experimental data on InGaN-AlGaN quantum well lasers, as reported by Nakamura et al., is also presented.