Permanent Damage Effects in Si and AlGaAs/GaAs Photodiodes

摘要

A study of permanent damage effects in photodiodes due to total dose exposures of 10 exp 8 rad (Si) ionizing-radiation from a exp 60 Co source is discussed. Specifically, the degradation of optical quantum efficiency and increases in photodiode leakage current in Si PIN structures are compared with specially designed and fabricated, double heterostructure AlGaAs/GaAs photodiodes. Results indicate some degradation in quantum efficiency (20 to 30%) for both types of devices. Leakage currents were found to increase significantly after 10 exp 8 rad in the Si PIN structures but only increase slightly in the AlGaAs/GaAs structures. (ERA citation 07:051379)