Amorphous Silicon-Carbon Films

摘要

Thin films of amorphous silicon-carbon-hydrogen were prepared by reactive rf sputtering in an argon-propane atmosphere. AES and NMR were used to determine the film composition. IR measurements show that the SiH stretching mode at 2087 cm exp -1 is present in addition to an admixture of the Si-CH sub 3 wagging mode near 780 cm exp -1 ; and the Si-C stretching mode at approx. 700 cm exp -1 . Optical density measurements were used to determine that the optical gap energy appears to vary between 2.0 and 2.2 eV. A series of isochronal annealing steps were performed on the aSiC:H films and the changes in hydrogen bonding and optical gap energy are observed. Photoluminescence measurements have also been made on the aSiC:H films. (ERA citation 08:054274)