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MANUFACTURE OF THIN FILM OF HYDROGENATED AMORPHOUS SILICON-CARBON

机译:氢化非晶硅薄膜的制备

摘要

PURPOSE:To obtain the thin film of hydrogenated amorphous silicon-carbon having high photosensitivity and satisfactory insulation by carrying out magnetron sputtering in an atmosphere contg. CH4. CONSTITUTION:A target 2 is placed on the magnet 3 of a magnetron sputtering device in a vessel 8, and a substrate 4 is placed opposite to the target 2 and heated to about 300 deg.C with a heater 6 controlled with a temp. controller 5. The vessel 8 is evacuated to =1X10-5Torr degree of vacuum through an exhaust pipe 7. Gaseous CH4 and gaseous Ar are then fed to the vessel 8 through gas feeding pipes 9, 10, and magnetron sputtering is carried out to form a thin film of hydrogenated amorphous silicon-carbon on the substrate 4. A single crystal silicon plate is used for the target 2.
机译:用途:通过在连续的气氛中进行磁控溅射,获得具有高光敏性和令人满意的绝缘性的氢化非晶硅碳薄膜。 CH4。组成:将靶材2放置在容器8中的磁控溅射设备的磁铁3上,将基板4与靶材2相对放置,并用温度控制的加热器6加热到约300℃。控制器5通过排气管7将容器8抽真空至> = 1X10 -5 rr。然后将气态CH4和气态Ar通过供气管9、10供入容器8,并进行磁控溅射。进行该反应以在基板4上形成氢化非晶硅碳薄膜。将单晶硅板用于靶2。

著录项

  • 公开/公告号JPS6148564A

    专利类型

  • 公开/公告日1986-03-10

    原文格式PDF

  • 申请/专利权人 KOITO MFG CO LTD;

    申请/专利号JP19840167658

  • 发明设计人 KUROSAWA YOSHIKI;SAITO YORIO;

    申请日1984-08-10

  • 分类号C23C14/06;C23C14/00;

  • 国家 JP

  • 入库时间 2022-08-22 07:43:41

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