Heavy Ion Rutherford Backscattering Analysis Used to Study Alloyed Metal/GaAs Interface

摘要

Heavy ion backscattering analysis of the near surface Pd/GaAs and Au:In/Pd/GaAs chemically prepared systems have been investigated as function of annealing temperature. We performed RBS analysis using 7 MeV incident energy nitrogen beam connected with a time of flight spectrometer detection. Using RBS random spectra, such method can resolve the composition of the alloyed deposited films (less 5 nm) and can profile As and Ga over 40 nm. The two main results from such analysis are: first, chemical palladium deposition is connected with a lack of arsenic which is preferentially exchanged to gallium atoms. Second, palladium diffusion is enhanced when using Au:In/Pd alloyed contacts. (ERA citation 12:047939)