Light Element Redistribution and Property Changes in Insulators Due to Ion Bombardment and Chemical Processing

摘要

Ion-implantation into certain classes of insulating materials results in compositional changes due to loss of material from the implanted region. These changes may be accompanied by the incorporation of ambient H. Crystalline LiNbO sub 3 (Li-loss) and alkali-silicate glasses (alkali-loss) are materials which exhibit such changes. In both cases, radiation-enhanced diffusion has been invoked for the heavy-ion losses. The compositional changes in the implanted region of alkali-silicate glasses can bring about phase-separation and crystallization with consequent significant physical property changes. Ion-implantation of H into SiO sub 2 (glassy and crystalline) has proved useful in determining the number of interstitial sites in these materials and a direct confirmation of indirectly obtained free-volume fraction values. (ERA citation 13:036951)