Investigation of Normal Incidence High-Performance P-type Strained LayerInGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors

摘要

The objective of this project is to perform theoretical and experimental studiesof dark current, photocurrent, optical absorption, spectral responsivity, noise, and detectivity for the normal incidence strained layer p-type III-V semiconductor quantum well infrared photodetectors (QWIPs) developed under this program. The material systems under investigation include InGaAs/InAlAs on InP substrates and GaAs/InGaAs or AlGaAs/InGaAs on GaAs substrates. The project will study the usage and effects of biaxial tension and compressional strain on the material systems and their effects towards photodetector design. jg.